Toshiba Electronics Europe (TEE) has extended its family of 650V silicon carbide (SiC) Schottky Barrier Diodes (SBD). The company’s 6, 8 and 10A devices are now
available in addition to its 12A SBD that entered volume production earlier in 2013. Analysts are predicting significant growth in the SiC power device market and in response to this the company aiming to address this increase with these new devices.
The SBD are suited to applications including power conditioners for photovoltaic power generation systems. SBDs are considered as an ideal replacement for silicon diodes in switching power supplies, where they are claimed to be 50 percent more efficient.
The company advises its SiC power devices offer more stable operation than current silicon devices – even at high voltages and currents – as they significantly reduce heat dissipation during operation. They meet diverse industry needs for smaller, more effective communications devices and suit industrial applications ranging from servers to inverters and trains to automotive systems.
This range features a maximum reverse recovery current (IRRM) of 90µA at 650V. The devives are are housed in TO-220 packages; other packages are planned.
Toshiba
