Synopsys has announced new extensions to its open source Interconnect Technology Format (ITF) which enable modelling of complex device and interconnect parasitic effects at the advanced 10 nanometer (nm) process node. The new extensions include modelling of variation effects due to multi patterning technology (MPT). Synopsys collaborated with the members of the Interconnect Modelling Technical Advisory Board (IMTAB) (member list available at www.imtab.org), an IEEE ISTO Federation Member Program, to define and ratify these new extensions. They will be available in the upcoming open source ITF version 2015.06.
“Enabling productive design and analysis for a coloured layout flow, while also providing a solution to model increased parasitic variation due to MPT approaches, is critical at 10nm,” said Bari Biswas, vice president of engineering for extraction solutions at Synopsys and chair of IMTAB. “Through our collaboration with IMTAB members and leading foundries, Synopsys developed an innovative solution that extended the existing variation models in ITF to become intrinsically colour aware to more accurately model mask dependency while fitting seamlessly into a designer’s existing flow.”
“ITF continues to be the cornerstone of parasitic modelling in the semiconductor industry,” said Marco Migliaro, president, IEEE ISTO. “The new 10nm models represent the fourth successive generation of model extensions fostered by the IMTAB consortium. IEEE ISTO looks forward to continuing our support of the IMTAB mission to drive increased tool interoperability through the ITF common open source modelling format.”
MPT is an evolution of the double patterning technology (DPT) first introduced by foundries at the 20nm process node, and it further extends the use of immersion lithography to 10nm and below. However, MPT imposes tighter requirements on design implementation and analysis to support layout decomposition into different masks (colouring) and manage increased variation due to misalignment of the multiple masks. Synopsys’ advanced MPT solution ratified by IMTAB for 1nm includes colour aware models that cover all leading foundry manufacturing techniques including sequential litho-etch patterning, for example, triple patterning (LELELE) and quadruple patterning (LELELELE), as well as spacer assisted/self aligned patterning, for example, self aligned double patterning (SADP) and self aligned quadruple patterning (SAQP).
In addition to MPT modelling, Synopsys has introduced other ITF extensions approved by IMTAB for more accurate via resistance and device capacitance extraction at advanced FinFET process nodes. At 10nm, via resistivity has increased significantly with growing conductor environment context, so the existing self aligned via resistance variation model has been extended to include coverage from top and bottom conductors. In addition, new ITF models have been added to accurately extract the floating gate to diffusion contact capacitance for polycide on diffusion edge (PODE) devices and spacer dielectric between gate polycide and contact, both of which are critical to regulating device performance.
More information on the new ITF extensions for 10nm can be found in the ITF specifications version 2015.06, targeted for release in June 2015.
Additional proposals for 10nm and below process modelling are planned for review in the next IMTAB meeting scheduled for Tuesday, June 9, 2015 in San Francisco, CA, USA. The confirmation of the date and agenda for the meeting will be posted on the IEEE ISTO’s IMTAB website: www.imtab.org.
