Two new IGBTs are being presented by Toshiba Electronics Europe (TEE).
The devices join the company’s existing range of IGBTs for induction heating and other current resonance inverter switching applications.
As with previous models, the 600V, 50A GT50JR21 and GT50JR22 combine an IGBT and a reverse recovery freewheeling diode into a single, monolithic device.
They are ideal for use in cooking appliances due to their application specifics.
The solution is supplied in a TO-3P(N), TO247-equivalent package and offers a high maximum junction temperature rating of 175ºC. Maximum current rating for both parts is 50A.
Typical saturation voltage (at IC = 50A) is just 1.5V for the GT50JR21 and 1.65V for the GT50JR22.
The new devices are based on the company’s enhancement mode semiconductor technology and are optimised for very high-speed switching.
Typical IGBT turn-on time (ton) and turn-off time (toff) with a collector current of 50A is just 0.26µs and 0.31µs and 0.25µs and 0.37µs respectively.
The GT50JR21 is suitable for low-frequency switching and GT50JR22 is suitable for higher-frequency switching.
The collector power dissipation for each IGBT is 230W at a temperature of 25ºC. Enter 000
Toshiba Electronics Europe (TEE)
