Samsung Electronics Co. is now mass producing its advanced DDR4 memory, targeting enterprise servers in next-generation data centres.
The 4Gb DDR4 devices, which use 20 nanometer process technology, are a direct response to the current industry demands for 16GB and 32GB memory modules. The company claims this is compared to conventional DRAM of which 8GB modules using a 30nm-class process technology are still commonplace.
“The adoption of ultra-high-speed DDR4 in next-generation server systems this year will initiate a push toward advanced premium memory across the enterprise,” said Young-Hyun Jun, Executive Vice President, Memory Sales & Marketing, Samsung Electronics.
“After providing cutting-edge performance with our timely supply of 16GB DDR3 earlier this year, we are continuing to extend the premium server market in 2013 and will now focus on higher density and added performance with 32GB DDR4, and contribute to even greater growth of the green IT market in 2014.”
In next-generation enterprise servers, the use of higher speed DRAM raises system level performance and lowers overall power consumption significantly. Adopting DDR4 memory technology early, can potentially help lower operational costs and improve performance.
The production of Samsung’s 20nm-class 4Gb DDR4 follows the introduction of 50nm-class 2Gb DDR3 in 2008, resulting in a linear transition to DDR4 for large-scale data centres and other enterprise applications in just five years. The company advises the 4Gb-based DDR4 has the fastest DRAM data transmission rate of 2,667 megabits per second – a 1.25-fold increase over 20nm-class DDR3, while lowering power consumption by more than 30 percent.
Samsung Electronics Co.
