GaN Systems, a developer of gallium nitride power switching semiconductors, has announced a family of normally-off 100V GaN transistors that spans 20-80A with very low on resistance. GS61002P, GS61004P, GS61006P and GS61008P are respectively 20A/21m?, 40A/11m?, 60A/8m? and 80A/5m? parts while GS71008P is an 80A/5m? half bridge device.
The new enhancement mode parts feature a reverse current capability, source-sense for optimal high speed design and exceptionally low Total Gate Charge (QG) and Reverse Recovery Charge (QRR). RoHS compliant, the devices are delivered in GaN Systems’ near chipscale, embedded GaNPX package which minimises inductance and optimises thermal performance.
Girvan Patterson, President of GaN Systems commented: “We believe we are the first company to have such a wide range of parts available for sampling now. Applications include high speed DC-DC converters, low voltage AC motor drives, inverters and switched mode power supplies.”
GaN Systems has also announced five new normally-off 650V GaN transistors optimised for high speed system design. The GS66502P, GS66504P, GS66506P and GS66508P are respectively 8.5A/165m?, 17A/82m?, 25A/55m? and 34A/41m? parts, while the GS43106L is a 30A/60m? cascode.
The new 650V enhancement mode parts feature a reverse current capability, zero reverse recovery charge and source-sense for optimal high speed design. RoHS compliant, the devices are delivered in GaN Systems’ near chipscale, embedded GaNPX package which eliminates wire bonds thereby minimising inductance. This package also optimises thermal performance and is extremely compact.
Girvan Patterson, President of GaN Systems again commented: “With these new 650V parts as well as our recently-announced 100V family, GaN Systems offers a very wide range of parts which are available for are sampling now. Applications include high speed DC-DC converters, resonant converters, AC motor drives, inverters, battery chargers and switched mode power supplies.”
