TTI, Inc., is now stocking what is being claimed as ‘the first’ 1W LED in the market, which is manufactured on 200mm silicon wafer. The TL1F1 white LED are being described as a cost effective solution from Toshiba.
LED-chips are typically produced on 2- to 4-inch wafers with an expensive sapphire substrate. Toshiba and Bridgelux, Inc. have developed a process for manufacturing gallium nitride LEDs on 200mm silicon wafers, which the company has brought to a new production line at Kaga Toshiba Electronics Corporation, a discrete products manufacturing facility in northern Japan.
The new gallium nitride-on-silicon (GaN-on-Si) technology has enabled the company to replace sapphire substrates and to produce the LED-chips on a much more cost-competitive silicon substrate.
TL1F1 series LEDs offers a small size of only 6.4 mm by 5.0 mm by 1.35 mm (LxWxH), a high luminous flux ranging from 85 lm to 112 lm (typ.) at IF = 350 mA and a high colour rendering index of Ra= 80 (min.). The colour temperature of the white LEDs ranges from 3000 to 5000 K (typ.). Reflow soldering is also available.
These devices are designed for an operating temperature range from -40 up to 100°C, as a result the new 1W LEDs are ideally suited for general lighting applications, bulbs, ceiling lighting, street lights and floodlights.
TTI, Inc.
