Demand continues to rapidly grow for Silicon Carbide (SiC)-based systems to maximise efficiency, and reduce size and weight, allowing engineers to create effective power solutions. Applications leveraging SiC technology range from electric vehicles and charging stations to smart power grids, and industrial and aircraft power systems. Microchip Technology today announced its expanded portfolio of smaller, lighter and more efficient SiC power modules.
Microchip’s SiC family includes commercially qualified Schottky Barrier Diode (SBD)-based power modules in 700, 1200 and 1700V variants. The new power module family includes various topologies including Dual Diode, Full Bridge, Phase Leg, Dual Common Cathode and 3-Phase bridge, in addition to offering different current and package options. The addition of SiC SBD modules simplifies designs by integrating multiple SiC diode die with the option to mix and match substrate and baseplate material into a single module – this maximises switching efficiency, reduces thermal rise and allows for a smaller system footprint.
“SiC technology adoption and expansion is a driving force in today’s system innovation: Microchip has a part to play in this, collaborating with customers across all segments and global regions,” said Leon Gross, vice president of Microchip’s Discrete Product Group business unit: “Our focus continues to be on delivering reliable solutions. From definition to product release, our SiC technology provides superior reliability and ruggedness, helping power system designers to ensure a long application life with no degradation in performance.”
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