One of the first 1W LEDs manufactured on 200mm silicon wafer is now available from TTI, Inc.
.Manufactured by Toshiba, the new TL1F1 white LED series described as a cost-competitive alternative to current LED packages.
LED-chips are typically produced on 2- to 4-inch wafers with an expensive sapphire substrate. Toshiba and Bridgelux, Inc. have developed a process for manufacturing gallium nitride LEDs on 200mm silicon wafers, which Toshiba has brought to a new production line at Kaga Toshiba Electronics Corporation, a discrete products manufacturing facility in northern Japan. The new gallium nitride-on-silicon (GaN-on-Si) technology has enabled the company to replace sapphire substrates and to produce the LED-chips on a much more cost-competitive silicon substrate.
Designed for an operating temperature range from -40 up to 100°C, the new 1W LEDs are ideally suited for general lighting applications, bulbs, ceiling lighting, street lights and floodlights.
TTI, Inc.
