A silicon substrate-based, gallium-nitride (GaN) power device that features a breakdown voltage of 150V is now available from Fujitsu Semiconductor.
The company advises its new MB51T008A device is capable of achieving roughly one half the figure of merit (FOM) of silicon-based power devices with an equivalent breakdown voltage. Most notably these GaN devices offer smaller, more efficient power supplies for many different applications from home appliances and ICT equipment to automotive applications.
The new devices features an on-state resistance of 13 milliohm and total gate charge of 16 nC, which roughly equates to half the FOM of silicon-based power devices with an equivalent breakdown voltage. Its features minimal parasitic inductance and high-frequency operations through the use of WLCSP packaging and a gate design that enables normally-off operations.
They are ideal for high-side switches and low-side switches in DC-DC converters employed in power supplies for data communications equipment, industrial products, and automobiles. In addition, because it supports a higher switching frequency in power supply circuits, power supplies can achieve improvements in overall size and efficiency.
This device uses of a breakdown voltage of 150V. The company advises it is also developing models with breakdown voltages of 600V and 30V, which have the capacity to enhance power efficiency in a wide range of product areas. These devices are based on the HEMT (High Electron Mobility Transistor) technology, which the company has led the development since the 1980s.
Fujitsu Semiconductor
http://jp.fujitsu.com/group/fsl/en/release/20130711.html
